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FIB (Focus Ion Beam)
Focused Ion Beam (FIB)
A Focused Ion Beam (FIB) instrument uses a finely focused ion beam to modify and image samples. FIB is chiefly used to create very precise cross sections of a sample for subsequent imaging via SEM, STEM or TEM or to perform circuit modification. Additionally FIB can be used to image a sample directly, detecting emitted electrons. The contrast mechanism for FIB is different than for SEM or S/TEM, so for some specific examples FIB can provide unique information. A dual beam FIB/SEM integrates these two techniques into one tool thus enabling sample prep and SEM imaging without handling the sample.
Sample Preparation
As a sample preparation tool, the FIB can accurately produce cross-sections of a sample that are impossible to create otherwise:
- FIB has revolutionized sample preparation for TEM samples, making it possible to identify sub-micron features and precisely prepare cross sections.
- FIB-prepared sections are used extensively in SEM microscopy, where the FIB preparation, SEM imaging, and elemental analysis can happen on the same multi-technique tool.
- FIB-prepared sections are also used in Auger Electron Spectroscopy to provide elemental identification of subsurface features quickly and precisely. identification.
- It is a good option for products that are hard to cross section, such as a soft polymer that is challenging to polish.
Technical Capabilities
Signal Detected: Electrons
Depth Resolution: 10 Angstroms
Imaging/Mapping: Yes
Lateral Resolution/Probe Size: 7 nm
Applications
- SEM, STEM and TEM sample preparation
- High resolution cross-section images of small, hard-to-access sample features
- Probe pad formation
- On-chip circuit modification
Relevant Industries for Auger Analysis
- Biomedical/biotechnology
- Data storage
- Optics
- Semiconductor
- Telecommunications
Strengths
- Best method to cross-section small targets
- Rapid, high-resolution imaging
- Good grain contrast imaging
- Versatile platform that supports many other tools
Limitations
- Vacuum compatibility typically required
- Imaging may spoil subsequent analyses
- Residual Ga on analytical face
- Ion beam damage may limit image resolution
- Cross-section area is small